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1.发明授权Nonvolatile trench memory device and self-aligned method for making such a device 失效非易失性沟槽存储器件和用于制造这种器件的自对准方法
公开(公告)号：US5229312A
公开(公告)日：1993-07-20
申请号：US867595
申请日：1992-04-13
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11556 , H01L27/115
摘要： A nonvolatile trench memory device such as an EEPROM is made by a method which permits an extremely compact and simple configuration due to the use of precise and efficient self-alignment techniques. Oxide-capped polysilicon mesas, formed integrally with the control gates, form the word lines of the memory device, while drain metallization lines contact drain regions of the device and extend over the oxide-capped word lines to form the bit lines. The resulting device is extremely compact, since the self-aligned process permits tighter tolerances and the unique polysilicon mesa/oxide cap construction permits a more compact configuration.
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