公开(公告)号：US08620063B2

公开(公告)日：2013-12-31

申请号：US13202251

申请日：2010-02-17

申请人： Scott A. Balak ,  Gang Sun

发明人： Scott A. Balak ,  Gang Sun

IPC分类号： G06K9/00

CPC分类号： G01N21/88 ,  G01N21/21

摘要： Methods of monitoring critical dimensions in a semiconductor fabrication process include capturing at least one image of a first structure that has an effect on the polarization state of light reflected therefrom. For at least some of the first structure images, a value is calculated indicative of intensity of light reflected from the first structure. A critical dimension of the first structure is obtained and correlated with the calculated value. At least one image of a subsequent structure is captured. A determination is made, based at least in part on the calculated value, of a critical dimension of the subsequent structure.

摘要翻译： 在半导体制造工艺中监测关键尺寸的方法包括捕获对从其反射的光的偏振状态具有影响的第一结构的至少一个图像。 对于至少一些第一结构图像，计算指示从第一结构反射的光的强度的值。 获得第一结构的临界尺寸并与计算值相关。 捕获后续结构的至少一个图像。 至少部分地基于计算值确定后续结构的关键维度。

公开(公告)号：US20120070065A1

公开(公告)日：2012-03-22

申请号：US13202251

申请日：2010-02-17

申请人： Scott A. Balak ,  Gang Sun

发明人： Scott A. Balak ,  Gang Sun

IPC分类号： G06K9/00 ,  G01J4/00

CPC分类号： G01N21/88 ,  G01N21/21

摘要： Methods of monitoring critical dimensions in a semiconductor fabrication process include capturing at least one image of a first structure that has an effect on the polarization state of light reflected therefrom. For at least some of the first structure images, a value is calculated indicative of intensity of light reflected from the first structure. A critical dimension of the first structure is obtained and correlated with the calculated value. At least one image of a subsequent structure is captured. A determination is made, based at least in part on the calculated value, of a critical dimension of the subsequent structure.

摘要翻译： 在半导体制造工艺中监测关键尺寸的方法包括捕获对从其反射的光的偏振状态具有影响的第一结构的至少一个图像。 对于至少一些第一结构图像，计算指示从第一结构反射的光的强度的值。 获得第一结构的临界尺寸并与计算值相关。 捕获后续结构的至少一个图像。 至少部分地基于计算值确定后续结构的关键维度。