公开(公告)号：US06606738B1

公开(公告)日：2003-08-12

申请号：US09822993

申请日：2001-03-30

申请人： Scott Bell ,  Marina Plat ,  Amada Wilkison ,  Chih-Yuh Yang

发明人： Scott Bell ,  Marina Plat ,  Amada Wilkison ,  Chih-Yuh Yang

IPC分类号： G06F1750

CPC分类号： G03F7/40 ,  H01L21/31138 ,  H01L21/32139

摘要： In the present method of trimming photoresist to form a mask for a layer of a semiconductor device, which layer may include polysilicon and/or nitride, the method is practiced substantially in accordance with: wmin=(h0−Rvtmax)/ARmax where w1=minimum width of trimmed photoresist; h0=height of photoresist prior to trim; Rv=resist vertical etch rate; tmax=maximum etch time to reach resist vertical etch limit; ARmax=maximum allowable aspect ratio of trimmed photoresist. The present invention is further a method of trimming photoresist to form a mask for a layer of a semiconductor device, which layer may include polysilicon and/or nitride, and which method is practiced substantially in accordance with: w0=(h0−Rvtmax)/ARmax+Rhtmax where w0=width of photoresist prior to trim; h0=height of photoresist prior to trim; Rv=resist vertical etch rate; tmax=maximum etch time to reach resist vertical etch limit; ARmax=maximum allowable aspect ratio of trimmed photoresist; Rh=horizontal resist etch rate.

摘要翻译： 在本发明的光刻胶修整方法中，为了形成半导体器件层的掩模，该层可以包括多晶硅和/或氮化物，该方法基本上按以下方式实施：其中w1 =修整的光致抗蚀剂的最小宽度; h0 = 光刻胶在修剪之前; Rv =抗蚀剂垂直蚀刻速率; tmax =达到抗蚀剂垂直蚀刻极限的最大蚀刻时间; ARmax =修剪光致抗蚀剂的最大允许纵横比。本发明还涉及一种修整光致抗蚀剂以形成半导体器件层的掩模的方法，该层可包括多晶硅和/或氮化物，并且该方法基本上按照 其中：w0 =修剪之前的光致抗蚀剂的宽度; h0 =修剪前光致抗蚀剂的高度; Rv =抗蚀剂垂直蚀刻速率; tmax =达到抗蚀剂垂直蚀刻极限的最大蚀刻时间; ARmax =修剪光致抗蚀剂的最大允许纵横比; Rh =水平抗蚀剂蚀刻速率。