-
1.发明授权Trapezoidal back bias and trilayer reader geometry with predetermined magnetization shape 有权具有预定磁化形状的梯形背偏置和三层读取器几何形状公开(公告)号：US08724265B2
公开(公告)日：2014-05-13
申请号：US13743607
申请日：2013-01-17
Applicant: Seagate Technology LLC
Inventor： Jiaoming Qiu , Kaizhong Gao , Yonghua Chen , Beverley Craig , Zhongyan Wang , Vladyslav A. Vas'ko
CPC classification number: G11B5/127 , G11B5/39 , G11B5/3932
Abstract: A magnetoresistive sensor is generally disclosed. Various embodiments of a sensor can have at least a trilayer sensor stack biased with a back biasing magnet adjacent a back of the trilayer sensor. The back biasing magnet, the trilayer sensor stack, or both have substantially trapezoidal shapes to enhance the biasing field and to minimize noise.
Abstract translation: 通常公开了一种磁阻传感器。 传感器的各种实施例可以具有至少三层传感器堆叠，该三层传感器堆叠与靠近三层传感器背面的背偏置磁体偏置。 背偏置磁体，三层传感器堆叠或两者具有基本上梯形的形状以增强偏置场并且使噪声最小化。
-
2.发明申请Trapezoidal Back Bias and Trilayer Reader Geometry to Enhance Device Performance 有权梯形反向偏置和三边形读取器几何以提高设备性能公开(公告)号：US20130128390A1
公开(公告)日：2013-05-23
申请号：US13743607
申请日：2013-01-17
Applicant: Seagate Technology LLC
Inventor： Jiaoming Qiu , Kaizhong Gao , Yonghua Chen , Beverley Craig , Zhongyan Wang , Vladyslav A. Vas'ko
CPC classification number: G11B5/127 , G11B5/39 , G11B5/3932
Abstract: A magnetoresistive sensor is generally disclosed. Various embodiments of a sensor can have at least a trilayer sensor stack biased with a back biasing magnet adjacent a back of the trilayer sensor. The back biasing magnet, the trilayer sensor stack, or both have substantially trapezoidal shapes to enhance the biasing field and to minimize noise.
Abstract translation: 通常公开磁阻传感器。 传感器的各种实施例可以具有至少三层传感器堆叠，该三层传感器堆叠与靠近三层传感器背面的背偏置磁体偏置。 背偏置磁体，三层传感器堆叠或两者具有基本上梯形的形状以增强偏置场并且使噪声最小化。
-
Search Results
2
records
(took 0.009 seconds)
