公开(公告)号：US20150332721A1

公开(公告)日：2015-11-19

申请号：US14808063

申请日：2015-07-24

Applicant: Seagate Technology LLC

Inventor： Jai-Young Kim ,  Thomas P. Nolan ,  Kyongha Kang ,  Shoutao Wang ,  Vincent D. Nguyen ,  Abebe Hailu ,  Charles C. Chen

IPC: G11B5/66 ,  G11B5/851 ,  G11B5/73

CPC classification number: G11B5/82 ,  G11B5/66 ,  G11B5/7325 ,  G11B5/851

Abstract: A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (Bs) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.

Abstract translation: 公开了一种包括晶体取向中间层，设置在中间层上的磁性零层和设置在磁性零层上的磁记录层的堆叠。 磁性零层是非磁性的或具有小于约100emu / cc的饱和磁通密度（Bs）。 磁性零层和磁性层包括由非磁性分离器包围的晶粒。 磁性零层在中间层和磁性层之间提供具有小于约4％的晶格失配的相干界面。

公开(公告)号：US09734857B2

公开(公告)日：2017-08-15

申请号：US14808063

申请日：2015-07-24

Applicant: Seagate Technology LLC

Inventor： Jai-Young Kim ,  Thomas P. Nolan ,  Kyongha Kang ,  Shoutao Wang ,  Vincent D. Nguyen ,  Abebe Hailu ,  Charles C. Chen

IPC: G11B5/82 ,  G11B5/851 ,  G11B5/66 ,  G11B5/73

CPC classification number: G11B5/82 ,  G11B5/66 ,  G11B5/7325 ,  G11B5/851

Abstract: A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (Bs) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.