公开(公告)号：US20250069625A1

公开(公告)日：2025-02-27

申请号：US18938618

申请日：2024-11-06

Applicant: Seagate Technology LLC

Inventor： Sideq Bin Salleh ,  Mohd Arobi Bin Awang ,  Gary Anak Kelunie

IPC: G11B5/84 ,  B24B9/06 ,  B24B9/10

Abstract: A method includes partially forming a top chamfer on a disc substrate with a first brush, and partially forming a bottom chamfer on the disc substrate with a second brush. The method also includes completing the formation of the bottom chamfer with the first brush, and completing the formation of the top chamfer with the second brush.

公开(公告)号：US12159658B1

公开(公告)日：2024-12-03

申请号：US17496346

申请日：2021-10-07

Applicant: Seagate Technology LLC

Inventor： Sideq Bin Salleh ,  Mohd Arobi Bin Awang ,  Gary Anak Kelunie

IPC: G11B5/84 ,  B24B9/06 ,  B24B9/10

Abstract: A method includes partially forming a top chamfer on a disc substrate with a first brush, and partially forming a bottom chamfer on the disc substrate with a second brush. The method also includes completing the formation of the bottom chamfer with the first brush, and completing the formation of the top chamfer with the second brush.