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公开(公告)号：US08947820B1
公开(公告)日：2015-02-03
申请号：US14266569
申请日：2014-04-30
Applicant: Seagate Technology LLC
Inventor： Kirill Rivkin , Yanzhang Liu , Mourad Benakli , Huaqing Yin
IPC: G11B15/12
CPC classification number: G11B5/02 , G11B2005/001
Abstract: The implementations disclosed herein provide for a storage device including a preamplifier that generates a write current pulse having a region of reduced slew rate that temporally correlates with a time when a magnetization of a write pole tip switches polarity.
Abstract translation: 本文公开的实现方案提供了一种存储装置，其包括前置放大器，该前置放大器产生写入电流脉冲，该写入电流脉冲具有与写入磁极尖端的磁化切换极性时的时间相关的压摆率降低的区域。
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公开(公告)号：US09595275B1
公开(公告)日：2017-03-14
申请号：US14976184
申请日：2015-12-21
Applicant: Seagate Technology LLC
Inventor： Yanzhang Liu , Kirill Rivkin , Lei Lu , Huaqing Yin
CPC classification number: G11B5/465
Abstract: A method of removing a magnetic domain from a slider structure, such as a shield of a write head, in a storage assembly having a storage media. The method includes passing the slider structure in close proximity to a region on the storage media having a magnetic field sufficiently large to remove a magnetic domain in the slider structure.
Abstract translation: 一种从具有存储介质的存储组件中的滑动结构（例如写入头的屏蔽）去除磁畴的方法。 该方法包括使滑块结构靠近具有足够大的磁场的存储介质上的区域，以去除滑块结构中的磁畴。
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公开(公告)号：US09520148B1
公开(公告)日：2016-12-13
申请号：US14976286
申请日：2015-12-21
Applicant: Seagate Technology LLC
Inventor： Yanzhang Liu , Kirill Rivkin , Lei Lu , Huaqing Yin
CPC classification number: G11B5/465 , H01F13/006
Abstract: Methods of removing a magnetic domain from a slider structure, such as a shield in a write head, in a data storage assembly. The method comprises passing the slider structure in close proximity to a decaying magnetic field of at least 100 Oe and no more than 1500 Oe originating from within the storage assembly. In some implementations the decaying magnetic field has an oscillating polarity.
Abstract translation: 从数据存储组件中的诸如写入头中的屏蔽的滑块结构去除磁畴的方法。 该方法包括使滑块结构靠近来自存储组件内的至少100Oe且不超过1500ee的衰减磁场。 在一些实现中，衰减磁场具有振荡极性。
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