公开(公告)号：US20180218752A1

公开(公告)日：2018-08-02

申请号：US15422379

申请日：2017-02-01

Applicant: Seagate Technology LLC

Inventor： Bin LU ,  Yingguo PENG ,  Jan-Ulrich THIELE

IPC: G11B5/73 ,  G11B5/84 ,  G11B5/851 ,  G11B5/667

CPC classification number: G11B5/7325 ,  G11B5/66

Abstract: Provided herein is a method including depositing an amorphous magnetic soft underlayer (SUL) over a substrate. A first portion of a heatsink layer is deposited over the SUL, wherein the first portion includes first heat conductive grains that are separated by first grain boundaries. A second portion of the heatsink layer is deposited over the first portion, wherein the second portion includes second heat conductive grains that are separated by second grain boundaries. The second grain boundaries are thicker than the first grain boundaries. A third portion of the heatsink layer is deposited over the second portion, wherein the third portion includes third heat conductive grains that are separated by third grain boundaries. The third grain boundaries are thicker than the second grain boundaries. A granular recording layer is deposited over the heatsink layer.

公开(公告)号：US20190027173A1

公开(公告)日：2019-01-24

申请号：US15654562

申请日：2017-07-19

Applicant: Seagate Technology LLC

Inventor： YinFeng DING ,  Pin-Wei HUANG ,  Ganping JU ,  Yingguo PENG ,  Li GAO ,  Timothy J. KLEMMER ,  Kai-Chieh CHANG ,  Yukiko KUBOTA ,  Florin ZAVALICHE ,  Xiaobin ZHU ,  Qihong WU ,  Hassib AMINI ,  Jan-Ulrich THIELE

IPC: G11B5/65 ,  G11B5/66 ,  G11B5/84 ,  G11B5/02

Abstract: An apparatus is disclosed. The apparatus includes a first write layer, a second write layer, and a storage layer. The first write layer is disposed over the storage layer. The second write layer is disposed over the first write layer. The anisotropy field of the storage layer is greater than anisotropy field of the first write layer. The anisotropy field of the first write layer is greater than anisotropy field of the second write layer. The Curie temperature of the second write layer is greater than the Curie temperature of the first write layer. The Curie temperature of the first write layer is greater than a Curie temperature of the storage layer.