公开(公告)号：US20030197231A1

公开(公告)日：2003-10-23

申请号：US10431841

申请日：2003-05-07

申请人： Seiko Epson Corporation ,  Tadahiro OHMI

发明人： Tadahiro Ohmi ,  Hiroyuki Shimada

IPC分类号： H01L029/76

CPC分类号： H01L21/84 ,  H01L27/12

摘要： A semiconductor device includes an NMOSFET and a PMOSFET. Each MOSFET includes first and second impurity diffusion layers for forming a source region and a drain region which are formed in a silicon layer of an SOI substrate or the like, a channel region formed between the first and second impurity diffusion layers, a gate insulation layer at least formed on the channel region, and agate electrode formed on the gate insulation layer. The gate electrode includes a tantalum nitride layer in a region in contact with at least the gate insulation layer. The semiconductor device exhibits high current drive capability and can be manufactured at high yield.

摘要翻译： 半导体器件包括NMOSFET和PMOSFET。 每个MOSFET包括用于形成在SOI衬底等的硅层中形成的源极区和漏极区的第一和第二杂质扩散层，形成在第一和第二杂质扩散层之间的沟道区，栅极绝缘层 至少形成在沟道区上，以及形成在栅绝缘层上的玛瑙电极。 栅电极在与至少栅极绝缘层接触的区域中包括氮化钽层。 该半导体器件具有高电流驱动能力并且可以高产率制造。