公开(公告)号：US20200219871A1

公开(公告)日：2020-07-09

申请号：US16241172

申请日：2019-01-07

Applicant: Semiconductor Components Industries, LLC

Inventor： Peter MOENS ,  Arno Stockman ,  Piet VANMEERBEEK ,  Abhishek BANERJEE ,  Frederick Johan G. DECLERCQ

IPC: H01L27/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778

Abstract: An electronic device can include a high electron mobility transistor that includes a buried region, a channel layer overlying the buried region, a gate electrode, and a drain electrode overlying the buried region. The buried region can extend toward and does not underlie the gate electrode. In a particular aspect, the electronic device can further include a p-type semiconductor member overlying the channel layer. The gate electrode can overlie the channel layer, a p-type semiconductor member overlying the channel layer. The drain electrode can overlie and contact the buried region and the p-type semiconductor member. The p-type semiconductor member can be disposed between the gate and drain electrodes. In another embodiment, a source-side buried region may be used in addition to or in place of the buried region that is coupled to the drain electrode.