公开(公告)号：US12166090B2

公开(公告)日：2024-12-10

申请号：US17660691

申请日：2022-04-26

Applicant: Semiconductor Components Industries, LLC

Inventor： Zia Hossain ,  Joseph Andrew Yedinak ,  Sauvik Chowdhury ,  Muh-Ling Ger

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.

公开(公告)号：US11342424B2

公开(公告)日：2022-05-24

申请号：US16847152

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Zia Hossain ,  Joseph Andrew Yedinak ,  Sauvik Chowdhury ,  Muh-Ling Ger

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/36

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.

公开(公告)号：US20210320178A1

公开(公告)日：2021-10-14

申请号：US16847152

申请日：2020-04-13

Applicant: Semiconductor Components Industries, LLC

Inventor： Zia Hossain ,  Joseph Andrew Yedinak ,  Sauvik Chowdhury ,  Muh-Ling Ger

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.

公开(公告)号：US20220254889A1

公开(公告)日：2022-08-11

申请号：US17660691

申请日：2022-04-26

Applicant: Semiconductor Components Industries, LLC

Inventor： Zia Hossain ,  Joseph Andrew Yedinak ,  Sauvik Chowdhury ,  Muh-Ling Ger

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/36

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.