公开(公告)号：US20250098417A1

公开(公告)日：2025-03-20

申请号：US18828036

申请日：2024-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami JINTYOU ,  Daisuke KUROSAKI ,  Shiori TAMURA ,  Junichi KOEZUKA ,  Takahiro IGUCHI ,  Eiji SHIODA

IPC: H10K59/121 ,  H10K59/12

Abstract: A semiconductor device includes first to third insulating layers and a transistor including a semiconductor layer, first to fourth conductive layers, and fourth to sixth insulating layers. The first conductive layer, the first insulating layer, the third conductive layer, the fifth insulating layer, the second insulating layer, the third insulating layer, and the second conductive layer overlap in this order. The first to third insulating layers and the second and third conductive layers include an opening reaching the first conductive layer. In the opening, the first insulating layer includes a protruding portion, and the fourth insulating layer is in contact with the top surface of the first insulating layer and side surfaces of the fifth insulating layer and the second insulating layer. The fifth insulating layer, an oxide of the third conductive layer, is in contact with top and side surfaces of the third conductive layer. The semiconductor layer is in contact with the top surfaces of the first and second conductive layers and a side surface of the fourth insulating layer. The sixth insulating layer is in contact with the top surface of the semiconductor layer. The fourth conductive layer is over and in contact with the sixth insulating layer to overlap with the opening.