公开(公告)号：US20150171330A1

公开(公告)日：2015-06-18

申请号：US14626122

申请日：2015-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hirokazu YAMAGATA ,  Yoshimi ADACHI ,  Noriko SHIBATA

IPC: H01L51/00 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L51/0031 ,  H01L51/0032 ,  H01L51/52 ,  H01L51/5253 ,  H01L51/56 ,  H01L2251/568 ,  Y10T428/31504

Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.

Abstract translation: 提供了一种制造发光器件的方法，其中可以通过调查和修复发光元件的缺陷部分中的短路来执行令人满意的图像显示。 如果对具有缺陷部分的发光元件施加反向偏置电压，则向缺陷部分流过反向电流。 通过使用规定缺陷部位的位置的发射型显微镜来测量从逆向电流流出的光的发射，并且可以通过向缺陷部照射激光，将其转换成绝缘体来修复短路位置。

公开(公告)号：US20250040388A1

公开(公告)日：2025-01-30

申请号：US18783679

申请日：2024-07-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kunio KIMURA ,  Takuya KAWATA ,  Yukiko HONDA ,  Noriko SHIBATA

IPC: H10K59/35 ,  H10K59/80

Abstract: A display device includes first to third light-emitting devices. The first light-emitting device includes a first anode, a first cathode, and a first light-emitting layer between the first anode and the first cathode. The second light-emitting device includes a second anode, a second cathode, and a second light-emitting layer between the second anode and the second cathode. The third light-emitting device includes a third anode; a third cathode; and a third light-emitting layer and a fourth light-emitting layer between the third anode and the third cathode. The fourth light-emitting layer is between the third light-emitting layer and the third cathode and is in contact with the third light-emitting layer. The first to third light-emitting devices have different emission colors. The first and third light-emitting layers include a first light-emitting substance. The second and fourth light-emitting layers include a second light-emitting substance. A peak wavelength of an emission spectrum of the first light-emitting substance and a peak wavelength of an emission spectrum of the second light-emitting substance are different from each other.

公开(公告)号：US20130137194A1

公开(公告)日：2013-05-30

申请号：US13748890

申请日：2013-01-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY Co., Ltd.

Inventor： Hirokazu YAMAGATA ,  Yoshimi ADACHI ,  Noriko SHIBATA

IPC: H01L51/00

CPC classification number: H01L51/0031 ,  H01L51/0032 ,  H01L51/52 ,  H01L51/5253 ,  H01L51/56 ,  H01L2251/568 ,  Y10T428/31504

Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.