公开(公告)号：US10134766B2

公开(公告)日：2018-11-20

申请号：US15292544

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiko Hayakawa ,  Yuta Moriya ,  Junya Goto ,  Yasuyuki Arai

IPC: H01L27/12 ,  G02F1/1339 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G09G3/36

Abstract: The number of photolithography steps used for manufacturing a transistor is reduced to less than the conventional one and a highly reliable semiconductor device is provided. The present invention relates to a semiconductor device including a circuit including a transistor having an oxide semiconductor layer over a first substrate and a second substrate fixed to the first substrate with a sealant. A closed space surrounded by the sealant, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air. The sealant surrounds at least the transistor and has a closed pattern shape. Further, the circuit is a driver circuit including a transistor having an oxide semiconductor layer.