公开(公告)号：US20220271167A1

公开(公告)日：2022-08-25

申请号：US17626654

申请日：2020-07-08

Applicant: Semiconductor Energy Laboratory co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Shinya SASAGAWA ,  Naoki OKUNO ,  Masahiro TAKAHASHI ,  Kazuki TANEMARA

IPC: H01L29/786 ,  H01L27/108 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first oxide; a first conductor, a second conductor, and a first insulator over the first oxide; and a third conductor over the first insulator. The first conductor includes a first crystal. The second conductor includes a crystal having the same crystal structure as the first crystal. The first crystal has (111) orientation with respect to a surface of the first oxide. The first oxide includes a second crystal. The second crystal has c-axis alignment with respect to a surface where the first oxide is formed. The lattice mismatch degree of the first crystal with respect to the second crystal is lower than or equal to 8 percent.