Photoresist compositions and methods of forming a pattern using the same
    1.
    发明申请
    Photoresist compositions and methods of forming a pattern using the same 审中-公开
    光刻胶组合物和使用其形成图案的方法

    公开(公告)号:US20080102403A1

    公开(公告)日:2008-05-01

    申请号:US11977893

    申请日:2007-10-26

    IPC分类号: G03C1/00

    CPC分类号: G03F7/0397 G03F7/40

    摘要: A photoresist-composition includes about 4 to about 20 percent by weight of an acrylate copolymer; about 0.1 to about 0.5 percent by weight of a photoacid generator; and a solvent. The acrylate copolymer includes about 28 to about 38 percent by mole of a first repeating unit represented by Formula (1), about 28 to about 38 percent by mole of a second repeating unit represented by Formula (2), about 0.5 to about 22 percent by mole of a third repeating unit represented by Formula (3) and about 4 to about 42 percent by mole of a fourth repeating unit represented by Formula (4), wherein R1, R2, R3 and R4 independently represent a hydrogen atom or a C1-C3 alkyl group, X is a blocking group including an alkyl-substituted adamantane or an alkyl-substituted tricycloalkane, Y is a blocking group including a lactone, Z1 is a blocking group including a hydroxyl-substituted adamantane, and Z2 is a blocking group including an alkoxy-substituted adamantane.

    摘要翻译: 光致抗蚀剂组合物包含约4至约20重量%的丙烯酸酯共聚物; 约0.1至约0.5重量%的光酸产生剂; 和溶剂。 丙烯酸酯共聚物包含约28至约38摩尔%的由式(1)表示的第一重复单元,约28至约38摩尔%的由式(2)表示的第二重复单元,约0.5至约22重量% 的由式(3)表示的第三重复单元和约4至约42摩尔%的由式(4)表示的第四重复单元,其中R 1,R 2 R 3和R 4独立地表示氢原子或C 1 -C 3 - 烷基,X是包括烷基取代的金刚烷或烷基取代的三环烷烃的封闭基团,Y是包含内酯的封闭基团,Z 1是包含羟基取代的金刚烷的封闭基团, Z 2是含有烷氧基取代的金刚烷的封端基。