PLASMA PROCESSING APPARATUS
    1.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体加工设备

    公开(公告)号:US20090229756A1

    公开(公告)日:2009-09-17

    申请号:US12067808

    申请日:2006-09-15

    IPC分类号: C23F1/08

    摘要: In an atmospheric-pressure plasma processing apparatus, a first metal surface 21a of a first stage portion 21 of a stage 20 is exposed and an object to be processed W composed of a dielectric material is placed on the first metal surface 21a. A second stage portion 22 is disposed on a peripheral edge of the first stage portion 21. A solid dielectric layer 25 is disposed on a second metal 24 of the second stage portion 22. A peripheral portion of the object W is placed on an inner dielectric portion 26 of the solid dielectric layer 25. An electrode 11 generates a run up discharge D2 in a second movement range R2 above the second stage portion 22. Then, the electrode 11 is moved to a first movement range R1 above the first stage portion 21 and generates a regular plasma discharge D1.

    摘要翻译: 在大气压等离子体处理装置中,阶段20的第一阶段部分21的第一金属表面21a被暴露,并且由第一金属表面21a上放置由电介质材料构成的待处理物体W. 第二级部分22设置在第一级部分21的周缘上。固体电介质层25设置在第二级部分22的第二金属24上。物体W的周边部分被放置在内部电介质 固体电介质层25的部分26.电极11在第二级部分22上方的第二移动范围R2中产生上升放电D2。然后,电极11移动到第一级部分21之上的第一移动范围R1 并产生规则的等离子体放电D1。