公开(公告)号：US06699749B1

公开(公告)日：2004-03-02

申请号：US10429321

申请日：2003-05-05

申请人： Seung-Gun Lee ,  Il-Goo Kim ,  Ho-Sen Chang ,  Ju-Hyuk Chang ,  Sang-Rok Hah

发明人： Seung-Gun Lee ,  Il-Goo Kim ,  Ho-Sen Chang ,  Ju-Hyuk Chang ,  Sang-Rok Hah

IPC分类号： H01L218242

CPC分类号： H01L21/02071 ,  H01L21/32136 ,  H01L28/60

摘要： A method of manufacturing a MIM capacitor having a bottom electrode is provided by forming a metal wire including copper on a substrate. After the metal wire is formed on the substrate, a dielectric film is formed on the metal wire. A top electrode film is formed on the dielectric film, and then the top electrode film is etched to form a top electrode. A hard metallic polymer formed during the etching of the top electrode film is removed using a mixture of an oxygen gas and a fluorocarbon based gas. The lifting of the thin films is effectively prevented, and the yield of the manufacturing process for manufacturing a MIM capacitor is increased. Additionally, the MIM capacitor has a uniform capacitance because the damage to the dielectric film is prevented, and the oxidation of the bottom electrode is also prevented.

摘要翻译： 通过在基板上形成包含铜的金属线来提供制造具有底部电极的MIM电容器的方法。 在基板上形成金属线之后，在金属线上形成电介质膜。 在电介质膜上形成顶部电极膜，然后蚀刻顶部电极膜以形成顶部电极。 使用氧气和碳氟化合物气体的混合物除去在顶部电极膜的蚀刻期间形成的硬质金属聚合物。 有效地防止薄膜的提升，并且制造MIM电容器的制造工艺的成品率提高。 此外，MIM电容器具有均匀的电容，因为防止对电介质膜的损坏，并且还防止了底部电极的氧化。