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公开(公告)号：US11380389B2
公开(公告)日：2022-07-05
申请号：US17224386
申请日：2021-04-07
Inventor： Pinhan Chen , Yulin Wang , Bangwei Shen
IPC: G11C11/412 , G11C11/419 , H01L27/11
Abstract: The memory comprises a first pass gate transistor, a second pass gate transistor, a third pass gate transistor, and a fourth pass gate transistor. On-resistance of the second pass gate transistor is smaller than that of the first pass gate transistor, so that first read current flowing from a first read/write port of a first group of read/write dual ports is equal to second read current flowing from a second read/write port of the first group of read/write dual port. On-resistance of the fourth pass gate transistor is smaller than that of the third pass gate transistor, so that third read current flowing from a first read/write port of a second group of read/write dual ports is equal to fourth read current flowing from a second read/write port of the second group of read/write dual port.
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公开(公告)号：US20210366537A1
公开(公告)日：2021-11-25
申请号：US17224386
申请日：2021-04-07
Inventor： Pinhan Chen , Yulin Wang , Bangwei Shen
IPC: G11C11/419 , G11C11/412 , H01L27/11
Abstract: The memory comprises a first pass gate transistor, a second pass gate transistor, a third pass gate transistor, and a fourth pass gate transistor. On-resistance of the second pass gate transistor is smaller than that of the first pass gate transistor, so that first read current flowing from a first read/write port of a first group of read/write dual ports is equal to second read current flowing from a second read/write port of the first group of read/write dual port. On-resistance of the fourth pass gate transistor is smaller than that of the third pass gate transistor, so that third read current flowing from a first read/write port of a second group of read/write dual ports is equal to fourth read current flowing from a second read/write port of the second group of read/write dual port.
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