公开(公告)号：US11244587B2

公开(公告)日：2022-02-08

申请号：US16719588

申请日：2019-12-18

Applicant: Shanghai Tianma AM-OLED Co., Ltd.

Inventor： Junting Ouyang ,  Baiquan Lin ,  Kerui Xi ,  Xiangzi Kong

IPC: G09G3/20 ,  G09G3/3275 ,  H05K5/00 ,  G09G3/00 ,  G06F1/16

Abstract: A flexible display panel and a flexible display device are described. The flexible display panel includes a bending region, a non-bending region. A number of deformation detection units are disposed in the bending region. The deformation detection units each includes a first electrode, a piezoelectric (PZT) material function layer and a second electrode which are sequentially stacked in a direction perpendicular to a light-emitting surface of the flexible display panel. The density of the PZT units and PZT function layer thickness may vary depending on their distance from the bending axis.

公开(公告)号：US10607540B2

公开(公告)日：2020-03-31

申请号：US15917443

申请日：2018-03-09

Applicant: SHANGHAI TIANMA AM-OLED CO., LTD.

Inventor： Kerui Xi ,  Tingting Cui ,  Baiquan Lin ,  Junting Ouyang ,  Ruiyuan Zhou

IPC: G09G3/3233 ,  G09G3/3208

Abstract: Provided are a display panel and a display device. A pixel circuit in the disclosed display panel includes a driving module, a data writing module, a storage module, and at least one control module. The data writing module is configured to write a data signal into a control terminal of the driving module. The storage module is electrically connected to the control terminal of the driving module for maintaining a voltage on the control terminal of the driving module in an emit-lighting phase. The control module is electrically connected to the control terminal of the driving module for writing a signal into the control terminal of the driving module prior to the light-emitting stage. At least one hollowed structure is provided on the continuous gate structure of the control transistor of the control module. At least one channel's width-to-length ratio is different from others among the overlapping portions' channels.

公开(公告)号：US10733939B2

公开(公告)日：2020-08-04

申请号：US15890361

申请日：2018-02-07

Applicant: SHANGHAI TIANMA AM-OLED CO., LTD.

Inventor： Kerui Xi ,  Junting Ouyang ,  Baiquan Lin ,  Tingting Cui

IPC: G09G3/3291 ,  G09G3/3258 ,  G09G3/3241 ,  G09G3/3233

Abstract: Disclosed are a pixel circuit, a display panel and a drive method for a pixel circuit. The pixel circuit comprises: a light-emitting element, configured for emitting light in response to a drive current; a drive transistor, configured for providing the drive current to the light-emitting element; a data write device, configured for writing a data signal to a gate electrode of the drive transistor; a hold device, electrically connected with the gate electrode of the drive transistor and configured for holding a voltage on the gate electrode of the drive transistor in a light-emitting stage; and a control device, electrically connected with the gate electrode of the drive transistor and configured for controlling the drive transistor to operate in a full cut-off region in a cut-off stage, wherein, the cut-off stage precedes the light-emitting stage.

公开(公告)号：US10600353B2

公开(公告)日：2020-03-24

申请号：US15912045

申请日：2018-03-05

Applicant: SHANGHAI TIANMA AM-OLED CO., LTD.

Inventor： Kerui Xi ,  Tingting Cui ,  Baiquan Lin ,  Junting Ouyang ,  Zhonglan Cai

IPC: G09G3/30 ,  G09G3/3233

Abstract: Disclosed are a method for driving a pixel circuit, a display panel and a display device. The pixel circuit includes: a data write module, a drive transistor, a hold module and a light-emitting element. The method comprises, in a time period for a frame of display: a data writing stage in which a data signal is written by the data write module into a gate electrode of the drive transistor; a light-emitting stage in which a voltage on the gate electrode of the drive transistor is held by the hold module, the drive transistor supplies a drive current to the light-emitting element, and the light-emitting element emits light in response to the drive current; and a cut-off stage in which the drive transistor operates in a full cut-off region.