公开(公告)号：US20100126531A1

公开(公告)日：2010-05-27

申请号：US12277839

申请日：2008-11-25

申请人： Shao-Yen KU ,  Chi-Ming Yang ,  Tzu-Jeng Hsu

发明人： Shao-Yen KU ,  Chi-Ming Yang ,  Tzu-Jeng Hsu

IPC分类号： B08B3/08 ,  B08B3/10 ,  B08B13/00

CPC分类号： B08B7/0021 ,  B08B3/08 ,  B08B3/10

摘要： A process of cleaning a semiconductor device fabrication equipment is provided. In one embodiment, the semiconductor device fabrication equipment is placed in a chamber; a fluid is introduced into the chamber; a pressure and temperature of the fluid is controlled to bring the fluid to a supercritical state; the semiconductor device fabrication equipment is cleaned by having the supercritical fluid contact the semiconductor device fabrication equipment; the supercritical fluid is removed from the chamber; and the semiconductor device fabrication equipment is removed from the chamber.

摘要翻译： 提供了一种清洁半导体器件制造设备的过程。 在一个实施例中，将半导体器件制造设备放置在腔室中; 将流体引入室中; 控制流体的压力和温度使流体达到超临界状态; 通过使超临界流体与半导体器件制造设备接触来清洁半导体器件制造设备; 将超临界流体从腔室中取出; 并且半导体器件制造设备从腔室中移除。