公开(公告)号：US06524048B1

公开(公告)日：2003-02-25

申请号：US09571545

申请日：2000-05-16

申请人： Shinichi Tsukada ,  Masashi Takamatsu ,  Takeshi Sugimura ,  Akihiro Hamada

发明人： Shinichi Tsukada ,  Masashi Takamatsu ,  Takeshi Sugimura ,  Akihiro Hamada

IPC分类号： B21D5144

CPC分类号： B21D51/383

摘要： A can lid of the fully-open type has a disk-shaped panel, a score notched endlessly in a surface of the panel along an outer circumferential edge of the panel, for forming an opening in the panel, and a tab fixed to the panel by a rivet. The tab is attached in a direction substantially perpendicular to an initial tear-off line of the score. The surface of the panel which is concealed from view by the tab is printed with a circular mark representing a rolling direction in which the material of the panel has been rolled. The score is defined such that the rolling direction extends substantially at a right angle to the initial tear-off line of the score. The panel has an auxiliary score defined in the surface thereof near the rivet and positioned across the rivet from the initial tear-off line substantially parallel to the initial tear-off line and separate therefrom.

摘要翻译： 完全开式的罐盖具有圆盘形面板，在面板的外周边缘上沿着面板的外圆周边缘不断地凹陷的刻痕，用于在面板中形成开口，以及固定到面板的凸片 用铆钉 翼片沿着与分数的初始撕下线基本垂直的方向附接。 通过突片隐藏的面板的表面印有表示滚动方向的圆形标记，其中面板的材料已经被滚动。 评分被定义为使得滚动方向基本上与分数的初始撕下线成直角延伸。 该面板具有在其靠近铆钉的表面中限定的辅助刻痕，并且与起始撕离线基本上平行于初始剥离线定位在穿过铆钉的位置上并与之分开。

公开(公告)号：US07091797B2

公开(公告)日：2006-08-15

申请号：US10863445

申请日：2004-06-08

申请人： Masashi Takamatsu

发明人： Masashi Takamatsu

IPC分类号： H01L27/108 ,  H03B5/00

CPC分类号： H01L27/0811 ,  H01L27/0808 ,  H01L29/93 ,  H01L29/94 ,  H03L7/099

摘要： The present invention provides a MOS-type variable capacitance element which can obtain a sufficient capacitance valuable width and, at the same time, can eliminate restrictions imposed on a control voltage range. A MOS-type variable capacitance element includes a MOS transistor in which an N well having polarity opposite to polarity of the P type is formed on a P type semiconductor substrate, a pair of source and drain regions are formed in the inside of the N well, an N-type high-concentration region is formed in the inside of the N well, a gate oxide film is formed on the N well, and a gate electrode is formed on the gate oxide film, a first electrode which connects the source and drain regions to a reference potential, a second electrode which is connected to the gate electrode, and a third electrode which is connected to the N well and applies a control voltage having polarity equal to polarity of the P type to the N well using the reference potential as a reference, wherein a variable capacitance element is provided between the second electrode and the third electrode.

摘要翻译： 本发明提供一种MOS型可变电容元件，其可以获得足够的电容有价值的宽度，同时可以消除对控制电压范围的限制。 MOS型可变电容元件包括其中在P型半导体衬底上形成具有与P型极性相反极性的N阱的MOS晶体管，在N阱的内部形成一对源极和漏极区 在N阱的内部形成有N型高浓度区域，在N阱上形成栅极氧化膜，在栅极氧化膜上形成栅电极，将第一电极连接源极和 漏区域到参考电位，连接到栅电极的第二电极和连接到N阱的第三电极，并且使用参考电压向N阱施加极性等于P型极性的控制电压 电位作为参考，其中在第二电极和第三电极之间设置可变电容元件。

公开(公告)号：US06469453B2

公开(公告)日：2002-10-22

申请号：US09795422

申请日：2001-02-28

申请人： Takahisa Tajika ,  Masashi Takamatsu ,  Noriaki Urakawa ,  Takuji Sasahara ,  Haruyasu Nishiyama

发明人： Takahisa Tajika ,  Masashi Takamatsu ,  Noriaki Urakawa ,  Takuji Sasahara ,  Haruyasu Nishiyama

IPC分类号： H05B3700

CPC分类号： H05B41/2824 ,  H05B41/3927 ,  Y02B20/186

摘要： A backlight used for a liquid crystal display includes a plurality of light emitting units, and a phase controller for adjusting the phase of the light emitting units. The light emitting units are turned on and off based on pulse signals of a predetermined cycle having an on-period and an off-period. Under the control of the phase controller, the light emitting units are turned on or off with different phases.