公开(公告)号：US07829465B2

公开(公告)日：2010-11-09

申请号：US11834127

申请日：2007-08-06

申请人： Shouliang Lai ,  Ken Mackenzie ,  David Johnson

发明人： Shouliang Lai ,  Ken Mackenzie ,  David Johnson

IPC分类号： H01L21/301 ,  H01L21/461

CPC分类号： B81C1/00626 ,  B81C2201/0132 ,  H01L21/30655

摘要： The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.

摘要翻译： 本发明提供一种蚀刻衬底中的特征的方法。 该方法包括以下步骤：将基板放置在真空室中的基板支撑件上。 在基板上进行交替重复的处理，直到实现预定的沟槽深度和预定的侧壁角。 该方法的一部分是沉积步骤，其通过将至少一种含聚合物的气体引入真空室来进行。 等离子体从含聚合物的气体点燃，然后将其用于在基底上沉积聚合物。 交替重复工艺的另一部分是蚀刻步骤，其通过将含蚀刻剂的气体，含有气体的聚合物和含有气体的清除剂引入真空室来进行。 等离子体从含蚀刻剂的气体中点燃，含聚合物的气体和含有清除剂的气体，然后用于蚀刻衬底。

公开(公告)号：US20080061029A1

公开(公告)日：2008-03-13

申请号：US11834127

申请日：2007-08-06

申请人： Shouliang Lai ,  Ken Mackenzie ,  David Johnson

发明人： Shouliang Lai ,  Ken Mackenzie ,  David Johnson

IPC分类号： B44C1/22

CPC分类号： B81C1/00626 ,  B81C2201/0132 ,  H01L21/30655

摘要： The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermined trench depth and a predetermined sidewall angle are achieved. One part of the process is a deposition step which is carried out by introducing at least one polymer containing gas into the vacuum chamber. A plasma is ignited from the polymer containing gas which is then used to deposit a polymer on the substrate. The other part of the alternatingly and repeating process is an etching step which is carried out by introducing an etchant containing gas, a polymer containing gas and a scavenger containing gas into the vacuum chamber. A plasma is ignited from the etchant containing gas, the polymer containing gas and the scavenger containing gas which is then used to etch the substrate.

摘要翻译： 本发明提供一种蚀刻衬底中的特征的方法。 该方法包括以下步骤：将基板放置在真空室中的基板支撑件上。 在基板上进行交替重复的处理，直到实现预定的沟槽深度和预定的侧壁角。 该方法的一部分是沉积步骤，其通过将至少一种含聚合物的气体引入真空室来进行。 等离子体从含聚合物的气体点燃，然后将其用于在基底上沉积聚合物。 交替重复工艺的另一部分是蚀刻步骤，其通过将含蚀刻剂的气体，含有气体的聚合物和含有气体的清除剂引入真空室来进行。 等离子体从含蚀刻剂的气体中点燃，含聚合物的气体和含有清除剂的气体，然后用于蚀刻衬底。