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公开(公告)号：US20220173001A1
公开(公告)日：2022-06-02
申请号：US17456506
申请日：2021-11-24
Applicant: Showa Denko K.K.
Inventor： Naoto ISHIBASHI , Koichi MURATA , Hidekazu TSUCHIDA
Abstract: A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.
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