摘要:
A method and apparatus for treating an exhaust gas containing volatile organic compounds. The method includes the steps of: introducing an exhaust gas into a wet scrubber, so that the organic pollutants in the exhaust gas are absorbed by a scrubbing water; pumping the scrubbing water containing the organic pollutants into at least one oxidation tank, thereby causing oxidation reaction between the organic pollutants and an oxidizing agents containing ozone; and introducing the scrubbing water after the oxidation reaction into the wet scrubber. The oxidizing agent further comprises hydrogen peroxide.
摘要:
The present invention provides a process and apparatus for treating contaminated gas. A contaminated gas containing volatile organic compounds is continuously introduced into a reactor to allow the gas to contact a metal oxide catalyst and an oxidant for a period of time. The concentration of the volatile organic compounds can be thus reduced. The treated gas is then continuously emitted from the reactor. The concentration of the organic compounds of the emitted gas and/or the concentration of the oxidant are continuously monitored, and the oxidant feeding amount is controlled according to the monitored concentration. By means of the process of the present invention, volatile organic compound-containing waste gas with high humidity can be effectively treated, and the utility rate of the oxidant can be increased.
摘要:
A contaminated fluid such as water or a gas stream containing at least one organic contaminant is contacted in a continuous process with a particulate geothite catalyst in a reactor in the presence of hydrogen peroxide or ozone or both to decompose the organic contaminants.
摘要:
A method for treating waste gas containing PFC and/or HFC, comprising contacting a mixture of gas waste containing PFC and/or HFC, ozone, and water with an iron oxide catalyst at a temperature between 50 and 300° C. by gas-solid contact to perform an oxidation reaction for reducing the amount of PFC and/or HFC. An apparatus for treating waste gas containing PFC or HFC is also provided. The operational temperature in the present invention is much lower than the prior art, and thus provides lower energy consumption and little risk of fire. The present invention is suitable for the treatment of waste gas containing PFC and/or HFC, especially for the removal of perfluorocompounds from the waste gas generated by semiconductor and photoelectrical product manufacturing plants.