公开(公告)号：US20210202375A1

公开(公告)日：2021-07-01

申请号：US16728224

申请日：2019-12-27

Applicant: Silicon Laboratories Inc.

Inventor： Thomas C. Fowler ,  Jerome T. Wenske ,  Ahsanul Islam ,  Dan B. Kasha

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  H01L49/02

Abstract: An isolation capacitor structure reduces the likelihood of breakdown in the passivation layers by physically re-shaping or dividing the top plate of the isolation capacitor into two segments. In that way, the electric field is driven down and away from the passivation surfaces. One embodiment utilizes a series capacitor formed by the top metal plate of the capacitor and an additional “top hat” plate above the top metal plate that redirects the fields into the main isolation capacitor. Vias may be included between the top hat plate and the top metal plate. Another approach reshapes the top plate to have an integrated top hat structure and achieves similar results of directing charge down and away from the passivation layer surface breakdown paths.