公开(公告)号：US20240345950A1

公开(公告)日：2024-10-17

申请号：US18623055

申请日：2024-04-01

Applicant: Silicon Motion, Inc.

Inventor： Kuo-Han Yuan ,  Cheng-Yu Tsai

IPC: G06F12/02

CPC classification number: G06F12/0246

Abstract: The present invention provides a control method of a flash memory controller, which includes the steps of: setting a waiting time in an interrupt coalescing mechanism, and setting a timer, wherein a timeout value of the timer is equal to the waiting time; receiving multiple commands from a submission queue in a host device, generating multiple command responses after processing the multiple commands, and writing the multiple command responses to a completion queue in the host device; receiving a submission queue tail and a completion queue head from the host device; and when the timer reaches the timeout value, subtracting the completion queue head from the submission queue tail to obtain a queue depth of a command queue of the host device.

公开(公告)号：US20240411461A1

公开(公告)日：2024-12-12

申请号：US18666851

申请日：2024-05-17

Applicant: Silicon Motion, Inc.

Inventor： Cheng-Yu Tsai

IPC: G06F3/06

Abstract: A method for performing access control of a memory device with aid of interrupt management includes: utilizing a memory controller to receive a set of commands from a host device through a transmission interface circuit of the memory controller; and in response to the set of commands, utilizing the memory controller to perform a set of accessing operations upon a non-volatile (NV) memory for the host device, and return a single message-signaled interrupt (MSI) corresponding to the set of commands to the host device through the transmission interface circuit, for notifying the host device of completion of device side access control of the memory device regarding the set of commands, to allow the host device to complete host side access control of the host device regarding the set of commands.

公开(公告)号：US20240311044A1

公开(公告)日：2024-09-19

申请号：US18120973

申请日：2023-03-13

Applicant: Silicon Motion, Inc.

Inventor： Chia-Chi Liang ,  Cheng-Yu Tsai

IPC: G06F3/06

CPC classification number: G06F3/0656 ,  G06F3/0622 ,  G06F3/0679

Abstract: A method for reading data from a flash memory is provided. The method comprises: determining whether a host device is requesting a sequential read access to the flash memory; prior to receiving a first host read command issued by the host device, performing a read-ahead operation to read data from the flash memory according to a read-ahead start logical block address (LBA) if the host device is requesting the sequential read access to the flash memory; and storing the data that is read through the read-ahead operation in a read-ahead buffer; and in response to receiving a first host read command issued by the host device, sending a portion or all of data that is read through the read-ahead operation to the host device if a start LBA of the first host read command corresponds to one of start LBAs of data that is stored in the read-ahead buffer.

公开(公告)号：US12141060B1

公开(公告)日：2024-11-12

申请号：US18144864

申请日：2023-05-09

Applicant: Silicon Motion, Inc.

Inventor： Chia-Chi Liang ,  Cheng-Yu Tsai

IPC: G06F12/02

Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: dividing a GC operation into a plurality of partial GC operations; determining a default partial GC operation time period for each partial GC operation; determining a partial GC intensity according to at least a basic adjustment factor and an amplification factor; determining the basic adjustment factor according to a type of one or more source blocks corresponding to the GC operation; determining the amplification factor according to a percentage of invalid pages in the one or more source blocks corresponding to the GC operation; and performing the plurality of partial GC operations according to the partial GC intensity and the default partial GC operation time period.

公开(公告)号：US20240378146A1

公开(公告)日：2024-11-14

申请号：US18144864

申请日：2023-05-09

Applicant: Silicon Motion, Inc.

Inventor： Chia-Chi Liang ,  Cheng-Yu Tsai

IPC: G06F12/02

Abstract: A method of managing a garbage collection (GC) operation on a flash memory includes: dividing a GC operation into a plurality of partial GC operations; determining a default partial GC operation time period for each partial GC operation; determining a partial GC intensity according to at least a basic adjustment factor and an amplification factor; determining the basic adjustment factor according to a type of one or more source blocks corresponding to the GC operation; determining the amplification factor according to a percentage of invalid pages in the one or more source blocks corresponding to the GC operation; and performing the plurality of partial GC operations according to the partial GC intensity and the default partial GC operation time period.

公开(公告)号：US20240370367A1

公开(公告)日：2024-11-07

申请号：US18653915

申请日：2024-05-02

Applicant: Silicon Motion, Inc.

Inventor： Cheng-Yu Tsai

IPC: G06F12/02

Abstract: A method for performing garbage collection (GC) management of a memory device with aid of block classification and associated apparatus are provided. The method may include: utilizing a memory controller to divide at least one portion of blocks among a plurality of blocks into multiple first blocks belonging to at least one first type in a first area and multiple second blocks belonging to at least one second type in a second area; utilizing the memory controller to receive a first command from a host device through a transmission interface circuit within the memory controller; and during writing data in response to the first command, performing a foreground GC procedure to control the memory device to perform GC before completing at least one writing operation corresponding to the first command, for controlling priority of releasing storage space of the second area to be higher than that of the first area.