公开(公告)号：US12254219B2

公开(公告)日：2025-03-18

申请号：US18361150

申请日：2023-07-28

Applicant: Silicon Motion, Inc.

Inventor： Hsu-Ping Ou ,  Kuang-Ting Tai

IPC: G06F3/06

Abstract: A technique for signal deskew at the non-volatile memory side. The non-volatile memory includes a plurality of dies and a signal timing adjustment circuit. The dies are grouped into storage zones. A controller is coupled to the non-volatile memory through a plurality of data lines. Through the data lines, the controller issues a plurality of commands to provide zone delay parameters to the non-volatile memory to drive the signal timing adjustment circuit at the non-volatile memory side to separately adjust data-line timing of the different storage zones.