公开(公告)号：US20210065837A1

公开(公告)日：2021-03-04

申请号：US16828206

申请日：2020-03-24

Applicant: Silicon Storage Technology, Inc.

Inventor： Viktor MARKOV ,  Alexander KOTOV

IPC: G11C29/50 ,  G11C16/28 ,  G11C16/16

Abstract: A memory device that includes a plurality of non-volatile memory cells and a controller. The controller is configured to erase the plurality of memory cells, program each of the memory cells, and for each of the memory cells, measure a threshold voltage applied to the memory cell corresponding to a target current through the memory cell in a first read operation, re-measure a threshold voltage applied to the memory cell corresponding to the target current through the memory cell in a second read operation, and identify the memory cell as defective if a difference between the measured threshold voltage and the re-measured threshold voltage exceeds a predetermined amount.