公开(公告)号：US20080123697A1

公开(公告)日：2008-05-29

申请号：US11972156

申请日：2008-01-10

申请人： Silke TRAUT ,  Berthold Schmidt ,  Boris Sverdlov ,  Achim Thies

发明人： Silke TRAUT ,  Berthold Schmidt ,  Boris Sverdlov ,  Achim Thies

IPC分类号： H01S3/098

CPC分类号： H01S5/22 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/20 ,  H01S5/2022 ,  H01S5/2219

摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.

摘要翻译： 半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。 为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进设计，改进涉及一种抑制激光器的不期望的第一和更高阶模式的方法， 消耗能量，不对激光的光输出有贡献，从而降低了其效率。 该新颖效果由在激光二极管顶部包括CIG-复合索引引导元件的结构提供，所述CIG通过制造由一个或多个层组成的CIG元件并且包含至少一层提供光学 吸收不期望的激光波长的模式。 该CIG优选地包含作为半导体的第一接触层的绝缘层。 CIG元件通过所选择的处理步骤序列，特别是几个掩模步骤制造，并且在激光器半导体主体的厚度和覆盖范围内都被特别地成形，以提供所需的抑制特性。 此外，CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。