公开(公告)号：US06514885B1

公开(公告)日：2003-02-04

申请号：US09564087

申请日：2000-05-03

申请人： Sinji Onga ,  Robert W. Dutton ,  Kyeongjae Cho ,  Hideki Takada ,  Takako K. Okada ,  Hiroshi Ohtani ,  Yoshinori Asahi

发明人： Sinji Onga ,  Robert W. Dutton ,  Kyeongjae Cho ,  Hideki Takada ,  Takako K. Okada ,  Hiroshi Ohtani ,  Yoshinori Asahi

IPC分类号： H01L2131

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76224 ,  H01L21/823481

摘要： To reduce dislocations produced in the formation of shallow trench isolation regions in a semiconductor substrate, the semiconductor substrate is annealed in N2 ambient pressure with an O2 partial pressure of less than about 10−4 at a temperature between about 950 C.° and about 1055 C.°. In addition, a method to reduce crystalline defects in semiconductor manufacturing in which a metal is deposited on an insulator to form metal silicide is provided. The method provides for etching the insulator to create an overhang by an amount equal to at least one half of the thickness of the metal, thereby creating a void between the surface of the semiconductor substrate and the insulator. The metal is deposited on the first insulator and on the surface of the semiconductor substrate and the semiconductor substrate is heated thereby forming metal silicide on the surface of the substrate.

摘要翻译： 为了减少在半导体衬底中形成浅沟槽隔离区域产生的位错，半导体衬底在N 2环境压力下在约950℃至约1055℃的温度下以小于约10-4的O 2分压进行退火 C。 此外，提供了一种减少在绝缘体上沉积金属以形成金属硅化物的半导体制造中的晶体缺陷的方法。 该方法提供了蚀刻绝缘体以产生等于金属厚度的至少一半的量的伸出量，由此在半导体衬底的表面和绝缘体之间产生空隙。 金属沉积在第一绝缘体上并在半导体衬底的表面上，并且加热半导体衬底，从而在衬底的表面上形成金属硅化物。