公开(公告)号：US20230244095A1

公开(公告)日：2023-08-03

申请号：US18003387

申请日：2021-06-22

Applicant: Soitec

Inventor： Corrado Sciancalepore ,  Bruno Ghyselen ,  Alain Delpy ,  Céline Cailler ,  David Herisson ,  Aziz Alamidrissi

IPC: G02F1/01

CPC classification number: G02F1/0147 ,  G02F1/011 ,  G02F2202/105

Abstract: A method for manufacturing a thermo-optic component comprises the following steps:



a) providing a silicon-on-insulator (SOI) substrate comprising:

a surface layer made of single-crystal silicon, extending in a main plane and placed on a dielectric layer, itself placed on a carrier made of silicon, and
at least one buried cavity, which is formed in the carrier and which opens under the dielectric layer,


b) forming an optical waveguide extending in the main plane and comprising a core formed in the surface layer and encircled by an optical confinement layer including the dielectric layer,
c) producing at least one heating element, on the optical waveguide, the heating element being positioned, in the main plane, plumb with a segment of the optical waveguide, or on either side of the segment, the heating element and the segment of the optical waveguide being located plumb with the at least one recessed buried cavity.

公开(公告)号：US20230039295A1

公开(公告)日：2023-02-09

申请号：US17758848

申请日：2021-01-14

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  David Herisson ,  Alain Delpy

IPC: H01L27/146

Abstract: A method for fabricating an image sensor, comprising: providing a receiver substrate comprising a base substrate and an active layer comprising pixels, each pixel comprising a doped region for collecting the electric charges generated in the pixel, the receiver substrate being devoid of metal interconnections, providing a donor substrate comprising a weakened zone limiting a monocrystalline semiconductor layer, bonding the donor substrate to the receiver substrate, detaching the donor substrate along the weakened zone, so as to transfer the semiconductor layer to the receiver substrate, implementing a finishing treatment on the transferred monocrystalline semiconductor layer, the finishing treatment comprising (i) thinning of the transferred monocrystalline semiconductor layer by sacrificial oxidation followed by chemical etching and (ii) smoothing of the transferred monocrystalline semiconductor layer by means of at least one rapid anneal.