公开(公告)号：US20140129764A1

公开(公告)日：2014-05-08

申请号：US14156476

申请日：2014-01-16

Applicant: Solid State System Co., Ltd.

Inventor： Chih-Hung Wang ,  Chao-Han Wu ,  Ting-Chung Hu

IPC: G06F12/02

CPC classification number: G06F12/0246

Abstract: An allocation structure is used for a flash memory device. The flash memory device includes a first memory module and a second memory module. The first memory module and the second memory module respectively have a plurality of groups, and each of the groups of the first memory module has a plurality of physical blocks of the first memory module and each of the groups of the second memory module has a plurality of physical blocks of the second memory module. The allocation structure includes a first zone. The first zone is used to store a first allocation unit, and is formed by a first group of the groups of the first memory module and a first part of a second group of the groups of the second memory module.

Abstract translation: 分配结构用于闪存设备。 闪存器件包括第一存储器模块和第二存储器模块。 第一存储器模块和第二存储器模块分别具有多个组，并且第一存储器模块的每个组具有第一存储器模块的多个物理块，并且第二存储器模块的每个组具有多个 的第二存储器模块的物理块。 分配结构包括第一区域。 第一区域用于存储第一分配单元，并且由第一组存储器模块的第一组和第二存储器模块的组的第二组的第一部分形成。