公开(公告)号：US20160141319A1

公开(公告)日：2016-05-19

申请号：US15004193

申请日：2016-01-22

Applicant: Sony Corporation

Inventor： Takashi ABE ,  Ryoji SUZUKI ,  Keiji MABUCHI ,  Tetsuya IIZUKA ,  Takahisa UENO ,  Tsutomu HARUTA

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

Abstract translation: 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。