SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS
    3.
    发明申请
    SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS 有权
    固态成像装置及其制造方法及电子装置

    公开(公告)号:US20150171126A1

    公开(公告)日:2015-06-18

    申请号:US14567080

    申请日:2014-12-11

    申请人: Sony Corporation

    IPC分类号: H01L27/146

    摘要: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

    摘要翻译: 提供了一种固态成像装置,包括:成像像素,包括接收入射光的光电转换单元; 以及相位差检测像素,其包括所述光电转换单元和遮光单元,所述遮光单元屏蔽入射到所述光电转换单元的一些光,其中所述成像像素还包括形成在所述光电转换单元的上侧的高折射率膜 光电转换单元,并且相位差检测像素还包括形成在光电转换单元的上侧的低折射率膜。

    SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS

    公开(公告)号:US20160276398A1

    公开(公告)日:2016-09-22

    申请号:US15169992

    申请日:2016-06-01

    申请人: Sony Corporation

    IPC分类号: H01L27/146 H04N5/341

    摘要: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

    Solid-state imaging device and manufacturing method of the same, and electronic apparatus
    5.
    发明授权
    Solid-state imaging device and manufacturing method of the same, and electronic apparatus 有权
    固态成像装置及其制造方法以及电子装置

    公开(公告)号:US09425230B2

    公开(公告)日:2016-08-23

    申请号:US14567080

    申请日:2014-12-11

    申请人: Sony Corporation

    IPC分类号: H01L27/146

    摘要: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

    摘要翻译: 提供了一种固态成像装置,包括:成像像素,包括接收入射光的光电转换单元; 以及相位差检测像素,其包括所述光电转换单元和遮光单元,所述遮光单元屏蔽入射到所述光电转换单元的一些光,其中所述成像像素还包括形成在所述光电转换单元的上侧的高折射率膜 光电转换单元,并且相位差检测像素还包括形成在光电转换单元的上侧的低折射率膜。