公开(公告)号：US11005234B1

公开(公告)日：2021-05-11

申请号：US16811187

申请日：2020-03-06

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Chendong Bai

IPC: H01S5/40 ,  B82Y20/00 ,  H01S5/343 ,  H01S5/22

Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.

公开(公告)号：US10050415B1

公开(公告)日：2018-08-14

申请号：US15643976

申请日：2017-07-07

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Chendong Bai

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/2201 ,  H01S5/34333 ,  H01S5/4012

Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, Al GaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.

公开(公告)号：US10587097B1

公开(公告)日：2020-03-10

申请号：US16045463

申请日：2018-07-25

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Chendong Bai

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/22 ,  H01S5/343 ,  B82Y20/00

Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.

公开(公告)号：US09716369B1

公开(公告)日：2017-07-25

申请号：US15047494

申请日：2016-02-18

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Chendong Bai

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/343 ,  H01S5/22

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/2201 ,  H01S5/34333 ,  H01S5/4012

Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.