公开(公告)号：US20210336003A1

公开(公告)日：2021-10-28

申请号：US17254107

申请日：2019-01-11

Applicant: South China Normal University

Inventor： Richard Notzel ,  Peng Wang ,  Stefano Sanguinetti ,  Guofu Zhou

IPC: H01L29/06 ,  H01L29/20 ,  H01L21/02

Abstract: Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.

公开(公告)号：US11521852B2

公开(公告)日：2022-12-06

申请号：US17254102

申请日：2018-12-19

Applicant: South China Normal University

Inventor： Richard Notzel ,  Peng Wang ,  Stefano Sanguinetti ,  Guofu Zhou

IPC: H01L21/00 ,  H01L21/02

Abstract: Provided are a method for preparing an InGaN-based epitaxial layer on a Si substrate (12), as well as a silicon-based InGaN epitaxial layer prepared by the method. The method may include the steps of: 1) directly growing a first InGaN-based layer (11) on a Si substrate (12); and 2) growing a second InGaN-based layer on the first InGaN-based layer (11).

公开(公告)号：US12255231B2

公开(公告)日：2025-03-18

申请号：US17254107

申请日：2019-01-11

Applicant: South China Normal University

Inventor： Richard Notzel ,  Peng Wang ,  Stefano Sanguinetti ,  Guofu Zhou

IPC: H01L29/06 ,  B82Y40/00 ,  H01L21/02 ,  H01L29/20

Abstract: Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.

公开(公告)号：US20210272802A1

公开(公告)日：2021-09-02

申请号：US17254102

申请日：2018-12-19

Applicant: South China Normal University

Inventor： Richard Notzel ,  Peng Wang ,  Stefano Sanguinetti ,  Guofu Zhou

IPC: H01L21/02

Abstract: Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.