公开(公告)号：US06277714B1

公开(公告)日：2001-08-21

申请号：US09400496

申请日：1999-09-21

申请人： Stephan J. Fonash ,  Sanghoon Bae

发明人： Stephan J. Fonash ,  Sanghoon Bae

IPC分类号： H01L2120

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026

摘要： The method of the invention induces crystallization in an amorphous semiconductor layer, and includes the steps of: a) producing a patterned metal layer on a first substrate, the metal layer exhibiting a weak level of adherence to the first substrate; b) pressing the metal layer into physical contact with the amorphous semiconductor layer; c) applying heat, light or both to the metal layer and amorphous semiconductor layer to cause a reaction therebetween and a crystallization of the amorphous semiconductor that is juxtaposed to the metal.

摘要翻译： 本发明的方法在非晶半导体层中诱导结晶，并且包括以下步骤：a）在第一衬底上产生图案化金属层，所述金属层对第一衬底表现出弱的粘着水平; b）将所述金属层按压与所述非晶半导体层物理接触; c）向金属层和非晶半导体层施加热，光或两者，以引起其间的反应和与金属并置的非晶半导体的结晶。