Reduction in damage to optical elements used in optical lithography for
device fabrication
    1.
    发明授权
    Reduction in damage to optical elements used in optical lithography for device fabrication 失效
    减少光学元件用于器件制造的光学元件的损坏

    公开(公告)号:US5891605A

    公开(公告)日:1999-04-06

    申请号:US586412

    申请日:1996-01-16

    CPC classification number: G03F7/70583 G03F7/70241

    Abstract: An optical lithographic process and system for fabricating devices which includes an optical subsystem for reducing the rate of damage to the system's optics caused by exposure to energy pulses from an exposure source. The optical subsystem transforms a primary energy pulse from the exposure source into N secondary pulses, where N is .gtoreq.2 with a delay provided between each secondary pulse so as to reduce the peak intensity of the energy pulse being transmitted through the optical system. The subsystem redirects the secondary pulses spatially to satisfy source requirements for appropriate lithographic illuminators. Furthermore, the subsystem may be an intrinsic design feature of the illuminator or exposure source.

    Abstract translation: 一种用于制造器件的光学光刻工艺和系统,其包括用于降低由暴露于来自曝光源的能量脉冲引起的对系统光学器件的损伤率的光学子系统。 光学子系统将来自曝光源的一次能量脉冲变换为N次次脉冲,其中N在每个次级脉冲之间具有延迟,其中N是> / = 2,以便减少通过光学系统传输的能量脉冲的峰值强度。 子系统在空间上重新定向二次脉冲,以满足适当光刻照明器的光源要求。 此外,子系统可以是照明器或曝光源的固有设计特征。

    Lithographic process for device fabrication using electron beam imaging
    2.
    发明授权
    Lithographic process for device fabrication using electron beam imaging 有权
    使用电子束成像的器件制造的平版印刷工艺

    公开(公告)号:US06177218B1

    公开(公告)日:2001-01-23

    申请号:US09270487

    申请日:1999-03-15

    CPC classification number: G03F7/20 G03F1/20 Y10S430/143

    Abstract: A lithographic process for device fabrication in which a pattern is transferred from a mask into an energy sensitive material by projecting charged particle (e.g. electron beam) radiation onto the mask is disclosed. The pattern on the mask is divided into segments. The radiation transmitted through the mask and incident on the layer of energy sensitive material transfers a continuous image of the segmented mask pattern into the energy sensitive material. The images of each segment are joined together to form the continuous image by seam blending techniques. The seam blending techniques employ duplicate pattern information on segments for which the images are joined together. The image of the duplicate pattern information from a first segment is overlapped with the image of the duplicate pattern information from the second segment to blend the seams together. The exposure of the duplicate pattern information is controlled so that the aggregate dose of radiation used to transfer the image of the duplicate pattern information into the energy sensitive resist is about the same as the does of radiation used to transfer the image of the non-duplicate pattern information into the energy sensitive resist material.

    Abstract translation: 公开了一种用于器件制造的光刻工艺,其中通过将带电粒子(例如电子束)辐射投射到掩模上,将图案从掩模转移到能量敏感材料中。 面罩上的图案分为多段。 通过掩模传输并入射到能量敏感材料层上的辐射将分割的掩模图案的连续图像转移到能量敏感材料中。 每个片段的图像通过接缝混合技术连接在一起形成连续图像。 接缝混合技术在图像连接在一起的段上采用重复的图案信息。 来自第一段的重复图案信息的图像与来自第二段的重复图案信息的图像重叠,以将接缝混合在一起。 控制重复图案信息的曝光,使得用于将重复图案信息的图像转印到能量敏感抗蚀剂中的辐射的总剂量与用于转印非复制图像的图像的辐射量大致相同 图案信息转换成能量敏感抗蚀剂材料。

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