利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

63 条记录 (耗时 0.021 秒)

    SECURE ELECTRONIC VOTING DEVICE
    1.
    发明申请
    SECURE ELECTRONIC VOTING DEVICE 失效
    安全电子投票设备

    公开(公告)号：US20070051805A1

    公开(公告)日：2007-03-08

    申请号：US11162306

    申请日：2005-09-06

    申请人： Subramanian Iyer ,  Gregory Fredeman ,  Chandrasekharan Kothandaraman ,  Alan Leslie

    发明人： Subramanian Iyer ,  Gregory Fredeman ,  Chandrasekharan Kothandaraman ,  Alan Leslie

    IPC分类号： G07C13/00

    CPC分类号： G07C13/00

    摘要： A secure device for electronic voting is employs a write-once vote-recording cartridge, preferably based on an e-fuse array. The cartridge has two distinct modes of operation: write mode and read mode. When in write mode, the array can only be written—it cannot be read. When in read mode, the array can only be read—it cannot be written. The array starts out in write mode. When switched to read mode, it cannot be switched back. A hardware mechanism provides successful write confirmation. The e-fuse array is installed (like a cartridge) into a vote-recording device. The voting device has an encryption/authorization mechanism that combines polling parameters (entered by the polling authority) with user (voter) information (Voter ID confirmation, poll selections, etc.) to produce a “fuse string” to be written into the e-fuse array. Upon completion of each vote, the fuse string from is written to the array, with hardware confirmation of successful writing. When all polling is complete, the poll is “closed” by switching the e-fuse array to the “read” mode, which permanently disables any further modification of the array. The encryption used to generate the “fuse string” values for each voter (user) renders the e-fuse contents meaningless to anyone except an auditor with proper authorization. In order to read out the results of the poll, an auditor must enter “password” information to decode/decrypt the contents of the e-fuse array.

    摘要翻译： 用于电子投票的安全装置采用一个写入一次的投票记录盒，优选地基于电子熔丝阵列。 墨盒有两种不同的操作模式：写入模式和读取模式。 在写入模式下，数组只能写入 - 不能读取。 在读取模式下，只能读取数组 - 不能写入。 阵列以写入模式启动。 当切换到读取模式时，不能切换回。 硬件机制提供成功的写入确认。 电子保险丝阵列（如墨盒）安装到投票记录设备中。 投票设备具有将轮询参数（由轮询当局输入）的轮询参数与用户（选民）信息（投票人身份确认，投票选择等）组合的加密/授权机制，以产生要写入e的“保险丝串” - 数组。 每次投票完成后，将熔丝串写入阵列，硬件确认成功写入。 当所有轮询完成时，通过将电子熔丝阵列切换到“读取”模式，轮询“闭合”，永久禁用阵列的任何进一步修改。 用于为每个选民（用户）生成“保险丝串”值的加密使得电子保险丝内容对于任何具有适当授权的审计师除外没有任何意义。 为了阅读投票结果，审核员必须输入“密码”信息来解密/解密电子熔丝阵列的内容。

    PROGRAMMABLE ELECTRONIC FUSE
    2.
    发明申请
    PROGRAMMABLE ELECTRONIC FUSE 审中-公开
    可编程电子保险丝

    公开(公告)号：US20090179302A1

    公开(公告)日：2009-07-16

    申请号：US12355056

    申请日：2009-01-16

    申请人： Chandrasekharan Kothandaraman ,  Subramanian Iyer

    发明人： Chandrasekharan Kothandaraman ,  Subramanian Iyer

    IPC分类号： H01L23/525

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A programmable device (eFuse), includes: a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having a first end (12a), a second end (12b), a fuse link (11) between the ends, and an upper surface S. The semiconductor material includes a dopant having a concentration of at least 10*17/cc. The first end (12a) is wider than the second end (12b), and a metallic material is disposed on the upper surface. The metallic material is physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and through the metallic material.

    摘要翻译： 一种可编程器件（eF​​use），包括：衬底（10）; 绝缘体（13）; 在绝缘体上的细长半导体材料（12），所述细长半导体材料具有第一端（12a），第二端（12b），端部之间的熔断体（11）和上表面S.半导体材料包括 浓度至少为10 * 17 / cc的掺杂剂。 第一端（12a）比第二端（12b）宽，并且金属材料设置在上表面上。 响应于可流过半导体材料和通过金属材料的电流I，金属材料可沿着上表面物理迁移。

    SECURE ELECTRICALLY PROGRAMMABLE FUSE
    5.
    发明申请
    SECURE ELECTRICALLY PROGRAMMABLE FUSE 有权
    安全可编程保险丝

    公开(公告)号：US20060278932A1

    公开(公告)日：2006-12-14

    申请号：US11160151

    申请日：2005-06-10

    申请人： Chandrasekharan Kothandaraman ,  Subramanian Iyer

    发明人： Chandrasekharan Kothandaraman ,  Subramanian Iyer

    IPC分类号： H01L29/94

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： The present invention provides electrically-programmable fuse structures having radiation inhibitive properties for preventing non-destructive security breaches by radiation imaging techniques such as X-ray imaging, without adversely effecting fuse programmability, and methods of designing the same.

    摘要翻译： 本发明提供了具有辐射抑制特性的电可编程熔丝结构，用于通过诸如X射线成像的放射线成像技术来防止非破坏性的安全漏洞，而不会对保险丝可编程性产生不利影响，以及设计熔丝可编程性的方法。

    Programmable electronic fuse
    6.
    发明授权
    Programmable electronic fuse 有权
    可编程电子保险丝

    公开(公告)号：US07485944B2

    公开(公告)日：2009-02-03

    申请号：US10904058

    申请日：2004-10-21

    申请人： Chandrasekharan Kothandaraman ,  Subramanian Iyer

    发明人： Chandrasekharan Kothandaraman ,  Subramanian Iyer

    IPC分类号： H01L23/525

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A programmable device (eFuse), includes: a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having a first end (12a), a second end (12b), a fuse link (11) between the ends, and an upper surface S. The semiconductor material includes a dopant having a concentration of at least 10*17/cc. The first end (12a) is wider than the second end (12b), and a metallic material is disposed on the upper surface. The metallic material is physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and through the metallic material.

    摘要翻译： 一种可编程器件（eF​​use），包括：衬底（10）; 绝缘体（13）; 在绝缘体上的细长半导体材料（12），所述细长半导体材料具有第一端（12a），第二端（12b），端部之间的熔断体（11）和上表面S.半导体材料包括 浓度至少为10 * 17 / cc的掺杂剂。 第一端（12a）比第二端（12b）宽，并且金属材料设置在上表面上。 响应于可流过半导体材料和通过金属材料的电流I，金属材料可沿着上表面物理迁移。

    PROGRAMMABLE SEMICONDUCTOR DEVICE
    8.
    发明申请
    PROGRAMMABLE SEMICONDUCTOR DEVICE 有权
    可编程半导体器件

    公开(公告)号：US20060087001A1

    公开(公告)日：2006-04-27

    申请号：US10904058

    申请日：2004-10-21

    申请人： Chandrasekharan Kothandaraman ,  Subramanian Iyer

    发明人： Chandrasekharan Kothandaraman ,  Subramanian Iyer

    IPC分类号： H01L29/00

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A programmable device (eFuse), includes: a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having a first end (12a), a second end (12b), a fuse link (11) between the ends, and an upper surface S. The semiconductor material includes a dopant having a concentration of at least 10*17/cc. The first end (12a) is wider than the second end (12b), and a metallic material is disposed on the upper surface. The metallic material is physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and through the metallic material.

    摘要翻译： 一种可编程器件（eF​​use），包括：衬底（10）; 绝缘体（13）; 在绝缘体上的细长半导体材料（12），所述细长半导体材料具有第一端（12a），第二端（12b），端部之间的熔断体（11）和上表面S.半导体 材料包括浓度为至少10×17 / cc的掺杂剂。 第一端（12a）比第二端（12b）宽，金属材料设置在上表面上。 响应于可流过半导体材料并通过金属材料的电流I，金属材料可沿着上表面物理迁移。

    System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient
    9.
    发明授权
    System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient 有权
    通过产生温度梯度增强硅化物电迁移来编程熔丝结构的系统

    公开(公告)号：US06624499B2

    公开(公告)日：2003-09-23

    申请号：US10247415

    申请日：2002-09-19

    申请人： Chandrasekharan Kothandaraman ,  S. Sundar Kumar Iyer ,  Subramanian Iyer ,  Chandrasekhar Narayan

    发明人： Chandrasekharan Kothandaraman ,  S. Sundar Kumar Iyer ,  Subramanian Iyer ,  Chandrasekhar Narayan

    IPC分类号： H01L2900

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a system, apparatus and method of programming via electromigration. A semiconductor fuse which includes a cathode and an anode coupled by a fuse link having an electrically conductive component, such as silicide, is coupled to a power supply. A potential is applied across the conductive fuse link via the cathode and anode in which the potential is of a magnitude to initiate electromigration of silicide from a region of the semiconductor fuse reducing the conductivity of the fuse link. The electromigration is enhanced by effectuating a temperature gradient between the fuse link and one of the cathode and anode responsive to the applied potential. Portions of the semiconductor fuse are selectively cooled in a heat transfer relationship to increase the temperature gradient. In one embodiment, a heat sink is applied to the cathode. The heat sink can be a layer of metal coupled in close proximity to the cathode while insulated from the fuse link. In another embodiment, the temperature gradient is increased by selectively varying the thickness of the underlying oxide layer such that the cathode is disposed on a thinner layer of oxide than the fuse link.

    摘要翻译： 本发明提供一种通过电迁移编程的系统，装置和方法。 包括阴极和由具有诸如硅化物之类的导电部件的熔丝连接的阳极的半导体熔丝被耦合到电源。 电势通过阴极和阳极施加在导电熔丝连接上，其中电位为大小以引发硅化物从半导体熔丝的区域的电迁移，从而降低熔丝链的导电性。 响应于所施加的电位，通过实现熔丝链和阴极和阳极中的一个之间的温度梯度来增强电迁移。 半导体保险丝的一部分以热传递关系被选择性地冷却以增加温度梯度。 在一个实施例中，将散热器施加到阴极。 散热器可以是在与熔丝连接绝缘的情况下紧邻阴极耦合的金属层。 在另一个实施方案中，通过选择性地改变下面的氧化物层的厚度使得阴极设置在比熔丝链更薄的氧化物层上来增加温度梯度。