公开(公告)号：US20070047341A1

公开(公告)日：2007-03-01

申请号：US11347337

申请日：2006-02-06

申请人： Sumiko Domae ,  Daisaburo Takashima

发明人： Sumiko Domae ,  Daisaburo Takashima

IPC分类号： G11C29/00

CPC分类号： G11C11/22 ,  G11C29/816 ,  G11C29/84

摘要： A unit cell is composed of a memory cell transistor and a ferroelectric storage element connected in parallel between a source and a drain of the memory cell transistor. A memory cell block is composed of a plurality of unit cells connected in series. One end of the memory cell block is connected to a bit line via a block selecting transistor. The other end of the memory cell block is connected to a plate line. A redundancy unit cell is composed of a redundancy cell transistor and a ferroelectric storage element connected in parallel between a source and a drain of the redundancy cell transistor. A redundancy memory cell block is composed of a plurality of unit cells connected in series, the number of which is smaller than that of the unit cells in the memory cell block.

公开(公告)号：US07298657B2

公开(公告)日：2007-11-20

申请号：US11347337

申请日：2006-02-06

申请人： Sumiko Domae ,  Daisaburo Takashima

发明人： Sumiko Domae ,  Daisaburo Takashima

IPC分类号： G11C29/00

CPC分类号： G11C11/22 ,  G11C29/816 ,  G11C29/84

摘要： A unit cell is composed of a memory cell transistor and a ferroelectric storage element connected in parallel between a source and a drain of the memory cell transistor. A memory cell block is composed of a plurality of unit cells connected in series. One end of the memory cell block is connected to a bit line via a block selecting transistor. The other end of the memory cell block is connected to a plate line. A redundancy unit cell is composed of a redundancy cell transistor and a ferroelectric storage element connected in parallel between a source and a drain of the redundancy cell transistor. A redundancy memory cell block is composed of a plurality of unit cells connected in series, the number of which is smaller than that of the unit cells in the memory cell block.

摘要翻译： 单元电池由在存储单元晶体管的源极和漏极之间并联连接的存储单元晶体管和铁电存储元件组成。 存储单元块由串联连接的多个单位单元构成。 存储单元块的一端通过块选择晶体管连接到位线。 存储单元块的另一端连接到板线。 冗余单元由冗余单元晶体管和并联在冗余单元晶体管的源极和漏极之间的铁电存储元件组成。 冗余存储器单元块由串联连接的多个单元单元组成，其数量小于存储单元块中单元单元的数量。