公开(公告)号：US20200381509A1

公开(公告)日：2020-12-03

申请号：US16607211

申请日：2017-09-21

申请人： Sumitomo Electric Industries, Ltd.

发明人： Shinya KAWAMOTO ,  Makoto KIYAMA ,  Yukio ISHIKAWA ,  Katsushi HASHIO

IPC分类号： H01L29/04 ,  H01L29/06

摘要： A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resistance, or with a coefficient of variation, of 0.50 or less in each of three measurement areas having their centers at distances of 0 mm, 0.5R mm, and (R-17) mm, respectively, from the center of the main surface in the [010] direction.