公开(公告)号：US20160024686A1

公开(公告)日：2016-01-28

申请号：US14341589

申请日：2014-07-25

Applicant: SunEdison, Inc.

Inventor： Tirumani Swaminathan ,  Harold Korb

IPC: C30B15/22 ,  C30B29/06

CPC classification number: C30B15/22 ,  C30B15/02 ,  C30B15/12 ,  C30B15/20 ,  C30B29/06

Abstract: A method for growing a crystal ingot from a melt in a crystal growing system is provided. The system includes a crucible and a barrier disposed within the crucible. The method includes identifying a Peclet number (Pe) with an advective transport rate that is less than a diffusive transport rate, calculating a cross-sectional area of a passage to be formed in the barrier based on the identified Peclet number to allow outward diffusion of impurities through the passage during growth of the crystal ingot, and growing the crystal ingot using the barrier having the passage formed therein.

Abstract translation: 提供了一种在晶体生长系统中从熔体生长晶锭的方法。 该系统包括设置在坩埚内的坩埚和屏障。 该方法包括以小于扩散传输速率的平流传输速率来识别佩佩莱数（Pe），基于所识别的佩佩克数来计算要在屏障中形成的通道的横截面积，以允许向外扩散 通过晶体生长期间的通道产生杂质，并且使用其中形成通道的阻挡层生长晶锭。