公开(公告)号：US20190163061A1

公开(公告)日：2019-05-30

申请号：US15908781

申请日：2018-02-28

申请人： TAIFLEX SCIENTIFIC CO., LTD.

发明人： Chi-Shian CHEN ,  Bin-Ling TSAI ,  Yu-Pei CHEN ,  Chiao-Pei CHEN ,  Yu-Fu LIAO ,  Shih-Chang LIN ,  Chen-Ni CHEN ,  Tsung-Tai HUNG ,  Chiu-Feng CHEN

IPC分类号： G03F7/038 ,  G03F7/00 ,  C08L79/08

摘要： The present invention relates to a polyimide precursor and a lithography pattern formed by the same. The polyimide precursor has a repeating unit having a structure of formula (I): in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound; R1 represents a divalent group derivated from a diamine compound; and R2 independently represent a thermal-crosslinking group, a photosensitive-crosslinking group, or a hydrogen atom. The polyimide precursor has an excellent pattern-forming ability.