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    Semiconductor device and methods of manufacturing the same
    1.
    发明授权
    Semiconductor device and methods of manufacturing the same 有权

    公开(公告)号：US12057351B2

    公开(公告)日：2024-08-06

    申请号：US17654347

    申请日：2022-03-10

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Yi Chen Ho ,  Yu-Chuan Chen ,  Chieh Cheng ,  Chi-Hsun Lin ,  Zheng-Yang Pan ,  Shahaji B. More

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823878 ,  H01L21/823821

    摘要： Some implementations described herein provide a method that includes forming a set of fins of a device, where the set of fins comprises an isolation fin disposed between a first fin and a second fin of the set of fins. The method also includes forming an isolation structure on at least one side of the isolation fin, with the isolation fin providing electrical isolation between the first fin and the second fin of the set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming a funnel-shaped isolation structure between a first set of fins and a second set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming, after forming a first gate structure and a second gate structure, an isolation structure between the first gate structure and the second gate structure.