公开(公告)号：US12142637B2

公开(公告)日：2024-11-12

申请号：US17575590

申请日：2022-01-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Cheng-Yu Lin ,  Yi-Lin Fan ,  Hui-Zhong Zhuang ,  Sheng-Hsiung Chen ,  Jerry Chang Jui Kao ,  Xiangdong Chen

IPC: H01L29/06 ,  H01L23/522 ,  H01L29/40 ,  H01L29/423

Abstract: A cell region of a semiconductor device includes a first and second isolation dummy gates extending along a first direction. The semiconductor device further includes a first gate extending along the first direction and between the first isolation dummy gate and the second isolation dummy gate. The semiconductor device includes a second gate extending along the first direction, the second gate being between the first isolation dummy gate and the second isolation dummy gate relative to a second direction perpendicular to the first direction. The semiconductor device also includes a first active region and a second active region. The first active region extending in the second direction between the first isolation dummy gate and the second isolation dummy gate. The first active region has a first length in the second direction, and the second active region has a second length in the second direction different from the first length.