公开(公告)号：US20230019866A1

公开(公告)日：2023-01-19

申请号：US17599532

申请日：2021-07-19

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Guangshuo CAI

IPC: H01L27/12

Abstract: A semiconductor device, a manufacturing method thereof, and a display panel are provided. The semiconductor device includes a first active component. The first active component includes a first semiconductor layer and a contact layer. The contact layer includes a first doped layer, a second semiconductor layer, and a second doped layer stacked from bottom to top, so that there are at least two PN junction interfaces inside to increase a light to dark current ratio of the semiconductor device.

公开(公告)号：US20220406088A1

公开(公告)日：2022-12-22

申请号：US17255538

申请日：2020-12-23

Applicant: TCL China Star Optoelectronics Technology Co., Ltd.

Inventor： Guangshuo CAI

IPC: G06V40/13 ,  H01L27/12 ,  G06F21/32

Abstract: The present application provides a light sensor and a display device. A light sensing transistor and a switching transistor in the light sensor are configured to form a light sensor circuit. In a structural design, amorphous silicon is configured as a first active pattern of the light sensing transistor, so that a thickness of a channel region of the first active pattern is greater than or equal to 5000 angstroms. Therefore, a number of photo-generated carriers of the light sensing transistor is increased, which makes the light sensor have higher responses and increases fingerprint or palmprint recognition success rates.

公开(公告)号：US20220399470A1

公开(公告)日：2022-12-15

申请号：US17261581

申请日：2020-12-31

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Guangshuo CAI

IPC: H01L31/109 ,  H01L31/0224 ,  H01L27/32

Abstract: The present invention provides a photosensitive element, and a preparation method and a display device thereof. The photosensitive element includes a substrate; a first electrode arranged on the substrate; an N-type doped silicon layer arranged on the first electrode; an undoped silicon layer arranged on the N-type doped silicon layer; a molybdenum oxide layer arranged on the undoped silicon layer; an insulating layer arranged on the molybdenum oxide layer and the substrate, wherein a first opening is arranged on the insulating layer to expose the molybdenum oxide layer; and a second electrode arranged on the insulating layer and the molybdenum oxide layer, wherein the second electrode contacts the molybdenum oxide layer through the first opening.