Thin film transistor and manufacturing method thereof

    公开(公告)号:US12068416B2

    公开(公告)日:2024-08-20

    申请号:US17261015

    申请日:2020-12-29

    Inventor: Xiaobo Hu

    CPC classification number: H01L29/7869 H01L29/41733 H01L29/66742

    Abstract: A thin film transistor and a manufacturing method thereof are provided. The thin film transistor includes a composite electrode including a barrier layer and an electrode layer. The barrier layer has a protruding part relative to the electrode layer, an orthographic projection of the protruding part on the composite electrode protrudes beyond an orthographic projection of the electrode layer on the composite electrode, and a length of the protruding part ranges from 0.3 um to 0.5 um. The thin film transistor and the manufacturing method thereof of the present disclosure can relieve light leakage, thereby improving a contrast ratio of products.

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