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公开(公告)号：US20210335830A1
公开(公告)日：2021-10-28
申请号：US16954575
申请日：2020-05-12
IPC: H01L27/12 , H01L33/62 , H01L25/075 , H01L33/00
Abstract: An array substrate, a fabrication method thereof, and a display device are provided. The fabrication method includes forming a first conductive layer and a second conductive layer on both of a first area and a second area of a substrate; forming a bonding pin in the first area to electrically connect with a driving chip, wherein the second conductive layer is located at a side of the first conductive layer away from the substrate; and removing the second conductive layer in the second area, forming a conductive electrode in the second area to electrically connect with a light-emitting element by a connection member.
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公开(公告)号：US20210399110A1
公开(公告)日：2021-12-23
申请号：US16627811
申请日：2019-12-24
Inventor： Xiaobo HU
Abstract: The present disclosure provides a display panel, which includes a base substrate and an array layer disposed on the base substrate. The array layer includes a gate layer disposed on the base substrate; and the gate layer includes a first conductive metal layer, and a first molybdenum alloy layer and a first molybdenum oxide alloy layer sequentially stacked on the first conductive metal layer.
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Patent Agency Ranking
公开(公告)号：US20220406940A1
公开(公告)日：2022-12-22
申请号：US17261015
申请日：2020-12-29
Inventor： Xiaobo HU
IPC: H01L29/786 , H01L29/66 , H01L29/417
Abstract: A thin film transistor and a manufacturing method thereof are provided. The thin film transistor includes a composite electrode including a barrier layer and an electrode layer. The barrier layer has a protruding part relative to the electrode layer, an orthographic projection of the protruding part on the composite electrode protrudes beyond an orthographic projection of the electrode layer on the composite electrode, and a length of the protruding part ranges from 0.3 um to 0.5 um. The thin film transistor and the manufacturing method thereof of the present disclosure can relieve light leakage, thereby improving a contrast ratio of products.
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公开(公告)号：US20220392927A1
公开(公告)日：2022-12-08
申请号：US17426749
申请日：2021-06-15
Inventor： Xiaobo HU
Abstract: An array substrate and a manufacturing method thereof, and a display device are provided. The array substrate includes a substrate; a thin film transistor layer including a gate electrode, a source electrode, and a drain electrode; and a first anti-reflective layer disposed between the substrate and the thin film transistor layer and disposed corresponding to at least one of the gate electrode, the source electrode, or the drain electrode. Wherein, the first anti-reflective layer includes a peeling prevention layer and an anti-reflective functional layer. The anti-reflective functional layer is disposed on a side of the peeling prevention layer away from the substrate.
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公开(公告)号：US20240047548A1
公开(公告)日：2024-02-08
申请号：US17266655
申请日：2020-12-30
Inventor： Xiaobo HU
IPC: H01L29/49 , H01L29/786 , H01L27/12
CPC classification number: H01L29/4908 , H01L29/78603 , H01L27/1218 , H01L29/41733
Abstract: The present application discloses a thin film transistor and an array substrate. The thin film transistor includes a gate electrode, a source electrode, and a drain electrode, and at least one of the gate electrode, the source electrode, or the drain electrode is a composite film layer. The composite film layer includes a metal layer, a low reflection functional layer, and an alloy layer which are arranged in layers. The alloy layer covering a surface of the low reflection functional layer can enhance stability of the low reflection functional layer. Because adhesion between the alloy layer and dielectric layers such as silicon oxide, silicon nitride, and silicon oxynitride is stronger than that of the low reflection functional layer, the bulge phenomenon is not easy to occur under a high temperature environment.
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公开(公告)号：US20210375951A1
公开(公告)日：2021-12-02
申请号：US16627812
申请日：2019-12-23
Inventor： Xiaobo HU
IPC: H01L27/12 , G02F1/1362
Abstract: The present invention discloses an array substrate, a manufacturing method thereof, and a display panel. The array substrate includes a base substrate and a gate disposed on the base substrate. The gate includes a first side surface near the base substrate and a second side surface opposite to the first side surface. A roughness of the first side surface is greater than a roughness of the second side surface.
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公开(公告)号：US20210098497A1
公开(公告)日：2021-04-01
申请号：US16615532
申请日：2019-09-25
Inventor： Xiaobo HU
Abstract: This disclosure provides an array substrate and a fabricating method thereof. After metal traces are recrystallized from the molten state, sizes of metal grains constituting the metal traces become larger, and the grain boundaries and defects of the film layer of the metal traces are reduced, thereby reducing the degree of scattering of electrons during the transmission in the metal traces, reducing the resistivity of the metal traces, improving the conductivity of the metal traces and the array substrate, and reducing the thickness of the metal layer forming the metal traces.
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