Magnetoresistive element, magnetoresistive device and magnetic sensor

    公开(公告)号:US12204003B2

    公开(公告)日:2025-01-21

    申请号:US17955819

    申请日:2022-09-29

    Abstract: An MR element includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first magnetic layer has a magnetic shape anisotropy set in a first reference direction, and has a magnetization whose direction changes depending on an external magnetic field, the magnetization being oriented in a first magnetization direction in a state where the external magnetic field is not applied. The second magnetic layer has a magnetic shape anisotropy set in a second reference direction, and has a magnetization whose direction changes depending on the external magnetic field, the magnetization being oriented in a second magnetization direction in a state where the external magnetic field is not applied.

    Magnetic sensor
    2.
    发明授权

    公开(公告)号:US12253580B2

    公开(公告)日:2025-03-18

    申请号:US17949557

    申请日:2022-09-21

    Abstract: A magnetic sensor includes a plurality of resistor sections each including a plurality of MR elements, and a plurality of protruding surfaces each structured to cause the plurality of MR elements to detect a specific component of a target magnetic field. The plurality of MR elements are disposed dividedly in first to fourth areas corresponding respectively to the plurality of resistor sections. The plurality of protruding surfaces include a structural body extending across at least two of the first to fourth areas.

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